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TLE 4267
5-V Low-Drop Voltage Regulator
TLE 4267
Bipolar IC Features
q q q q q q q q q q q q q q
Output voltage tolerance 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ( 400 ms) Reset function down to 1 V output voltage ESD protection up to 2000 V Adjustable reset time On/off logic Overtemperature protection Reverse polarity protection Short-circuit proof Wide temperature range Suitable for use in automotive electronics Ordering Code Package Q67000-A9153 P-TO220-7-3 P-TO220-7-180 (SMD) P-TO220-7-230
P-TO220-7-3
P-TO220-7-180 Type TLE 4267
TLE 4267 G Q67006-A9169 TLE 4267 S Q67000-A9246
Functional Description
P-TO220-7-230
TLE 4267 is a 5-V low-drop voltage regulator in a TO220-7 package. It supplies an output current of > 400 mA. The IC is shortcircuit-proof and incorporates temperature protection that disables the IC at overtemperature. Application The IC regulates an input voltage VI in the range 5.5 V < VI < 40 V to VQrated = 5.0 V. A reset signal is generated for an output voltage VQ of < 4.5 V. The reset delay can be set with an external capacitor. The device has two logic inputs. It is turned-ON by a voltage of > 4 V on E2 by the ignition for example. It remains active as a function of the voltage on E6, even if the voltage on E2 goes Low. This makes it possible to implement a selfholding circuit without external components. When the device is turned-OFF, the output voltage drops to 0 V and current consumption tends towards 0 A.
Semiconductor Group 1 1998-11-01
TLE 4267
Design Notes for External Components The input capacitor CI is necessary for compensation line influences. The resonant circuit consisting of lead inductance and input capacitance can be damped by a resistor of approx. 1 in series with CI. The output capacitor is necessary for the stability of the regulating circuit. Stability is guaranteed at values of 22 F and an ESR of 3 within the operating temperature range. Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturating of the power element. A comparator in the reset-generator block compares a reference that is independent of the input voltage to the scaled-down output voltage. If this reaches a value of 4.5 V, the reset-delay capacitor is discharged and then the reset output is set Low. As the output voltage increases again, the reset-delay capacitor is charged with constant current from VQ = 4.5 V onwards. When the capacitor voltage reaches the upper switching threshold, reset goes High again. The reset delay can be set within wide range by selection of the external capacitor. With the integrated turn-ON/turn-OFF logic it is simple to implement delayed turn-OFF without external components. Truth Table for Turn-ON/Turn-OFF Logic Pin 2 L H H X L L Pin 6 X X L L L H
VQ
Remarks Initial state, pin 6 internally pulled up Regulator switched on via pin 2, by ignition for example Pin 6 clamped active to ground by controller while pin 2 is still high Previous state remains, even ignition is shut off: self-holding state Ignition shut off while regulator is in self-holding state Regulator shut down by releasing of pin 6 while pin 2 remains Low, final state. No active clamping required by external selfholding circuit (C) to keep regulator shut off.
OFF ON ON ON ON OFF
Pin 2: (Inhibit, E2) Enable function, active High Pin 6: (Hold, E6) Hold and release function, active Low
Semiconductor Group
2
1998-11-01
TLE 4267
Pin Configuration (top view)
P-TO220-7-3 P-TO220-7-180 P-TO220-7-230
1
23
456
7
12
345
6
7
1234567
E2
R GND
D E6
AEP01724
E2
R E2 GND
D E6
Q
AEP02123
R GND
D E6
Q
AEP01481
Pin Definitions and Functions Pin 1 2 3 4 5 6 7 Symbol
I
Function Input; block to ground directly at the IC by a ceramic capacitor Inhibit; device is turned-ON by High signal on this pin; internal pulldown resistor of 100 k Reset Output; open-collector output internally connected to the output via a resistor of 30 k Ground; connected to rear of chip Reset Delay; connect with capacitor to GND for setting delay Hold; see truth table above for function; this input is connected to output voltage across pullup resistor of 50 k 5-V Output; block to GND with 22-F capacitor, ESR < 3
E2 R GND D E6 Q
Semiconductor Group
3
1998-11-01
TLE 4267
Temperature Sensor In- 1 put Control Amplifier Adjustment Bandgap Reference Buffer
Saturation Control and Protection Circuit 7 5V Output 5 Reset Delay 3 Reset Output
Reset Generator
Turn-ON/Turn-OFF Logic 2 Inhibit 6 E6 Hold 4 GND
AEB01482
Block Diagram Absolute Maximum Ratings TJ = - 40 to 150 C Parameter Symbol Limit Values min. Input Voltage Voltage Current Reset Output Voltage Current Reset Delay Voltage max. Unit Notes
VI VI II
- 42 - -
42 60 -
V V -
-
t 400 ms
Limited internally
VR IR
- 0.3 -
7 -
V -
- Limited internally
Vd
- 0.3
42
V
-
Semiconductor Group
4
1998-11-01
TLE 4267
Absolute Maximum Ratings (cont'd) TJ = - 40 to 150 C Parameter Current Output Voltage Current Inhibit Voltage Current Hold Voltage Current GND Current Temperatures Junction temperature Storage temperature Operating Range Parameter Input voltage Junction temperature Thermal Resistance Junction ambient Junction-case Junction-case Symbol Limit Values min. max. 40 150 V C see diagram - 5.5 - 40 Unit Notes Symbol Limit Values min. max. - - - - Unit Notes
Id
VQ IQ
- 0.3 -
7 -
V -
- Limited internally
VE2 IE2
- 42 -5
42 5
V mA
t 400 ms
VE6 IE6
- 0.3 -
7 -
V mA
- Limited internally
IGND
- 0.5
-
A
-
TJ Tstg
- - 50
150 150
C C
- -
VI TJ
Rthja Rthjc Rthjc
- - -
70 6 2
K/W - K/W - K/W t < 1 ms
Semiconductor Group
5
1998-11-01
TLE 4267
Characteristics VI = 13.5 V; - 40 C < TJ < 125 C; VE2 > 4 V (unless specified otherwise) Parameter Output voltage Output voltage Output-current limiting Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Drop voltage Load regulation Supply-voltage regulation Supply-voltage rejection Longterm stability Symbol Limit Values min. typ. 5 5 - - 1.0 1.3 - - 0.3 - 15 54 0 max. 5.1 5.1 - 50 10 4 60 80 0.6 50 25 - - V V mA A A mA mA mA V mV mV dB mV 5 mA IQ 400 mA 6 V VI 26 V 5 mA IQ 150 mA 6 V VI 40 V 4.9 4.9 500 - - - - - - - - - - Unit Test Condition
VQ VQ IQ Iq Iq Iq Iq Iq VDr
VQ VQ
TJ = 25 C
Regulator-OFF
TJ = 25 C
IC turned off
IQ = 5 mA IC turned on IQ = 400 mA IQ = 400 mA VI = 5 V IQ = 400 mA1) 5 mA IQ 400 mA VI = 6 to 36 V; IQ = 5
mA
SVR
VQ
fr = 100 Hz; Vr = 0.5
Vpp 1000 h
1) Drop voltage = VI - VQ (measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V)
Semiconductor Group
6
1998-11-01
TLE 4267
Characteristics (cont'd) Parameter Symbol Limit Values min. Reset Generator Switching threshold Reset High level Saturation voltage typ. max. Unit Test Condition
Vrt
-
4.2 4.5 - - - 8 2.6 - - -
4.5 - 0.1 30 50 15 3 20 0.43 2
4.8 - 0.4 - 100 25 3.3 - - -
V V V k mV A V ms V s
-
VR Pullup RR VD,sat Saturation voltage Charge current Id Delay switching threshold Vdt td Delay Vst Switching threshold tt Delay
Inhibit Turn-ON voltage Turn-OFF voltage Pulldown Hysteresis Input current
Rext = RR = 4.7 k 1)
-
VQ < VRT VD = 1.5 V
-
Cd = 100 nF
-
Cd = 100 nF
VE2 VE2 RE2
VE2
- 2 50 0.2 - 30 60 20
3 - 100 0.5 35 35 70 50
4 - 200 0.8 100 40 80 100
V V k V A % % k
IC turned-ON IC turned-OFF - -
Holding voltage Turn-OFF voltage Pullup Overvoltage Protection Turn-OFF voltage Turn-ON hysteresis
IE2 VE6 VE6 RE6
VIP2 = 4 V
Referred to VQ Referred to VQ -
Vi,ov
Vi,ov
42 2
44 -
46 6
V V
- -
1) The reset output is Low between VQ = 1 V and VRT
Semiconductor Group
7
1998-11-01
TLE 4267
1000 F 470 nF
1
7
Q
22 F
TLE 4267
2 5 d 6 4 GND 3
4.7 k
E2
V
R
VQ VR
VE2
VC
CD
VE6
AES01483
Test Circuit
Input 470 nF E2; eg from Terminal 15 Reset To MC
1
7
5 V Output
2
TLE 4267
5 22 F 100 nF
3 4 6 E6 From C
AES01484
Application Circuit
Semiconductor Group
8
1998-11-01
TLE 4267
Vi
VE VE2, ON VE2, OFF VQ VRT
Vd VdT VST Vd, sat VR td
tt
VR, sat
Power on Thermal Reset Shutdown Voltage Drop at Input Undervoltage at Output Secondary Load Spike Bounce Shutdown
AET01985
Time Response
Semiconductor Group 9 1998-11-01
TLE 4267
Vi
VE2 VE2, ON VE2, OFF VE6 VE6, rel VE6, hold VQ VQ, VRT Vd VdT VST Vd, sat VR td
9) 8) <1 s < 10 s 1)
5)
2)
4)
6)
10)
VR, sat
1) 2) 3) 4)
3)
tt
Enable active Hold inactive, pulled up by VQ Power-ON reset Hold active, clamped to GND by external C 5) Enable inactive, clamped by int. pull-down resistor 6) 7) 8) 9) 10) Pulse width smaller than 1 s Hold inactive, released by C Voltage controller shutdown Output-low reset No switch on via VE6 possible after E6 was released toVE6 >VE6, rel for more than 4 s
AET01986
Enable and Hold Behaviour
Semiconductor Group 10 1998-11-01
TLE 4267
Output Voltage VQ versus Temperature Tj
5.10
AED01486
Drop Voltage VDr versus Output Current IQ
700
AED01488
VQ
V 5.00
V = 13.5 V
VDr
mV 500 400
4.90
300
T j = 125 C T j = 25 C
200
4.80
100 0
4.70 -40
0
40
80
C
160
0
100
200
300
400
mA
600
Tj
Q
Charge Current Id versus Temperature Tj
22
AED01485
Delay Switching Threshold VdT versus Temperature Tj
4.0
AED01487
d
A 18 16
VdT
V 3.0
V = 13.5 V
V = 13.5 V VC = 0 V
VdT
2.5
d
14
2.0 1.5
12 10
1.0 0.5 0 -40
-40
0
40
80
C
160
0
40
80
C
160
Tj
Tj
Semiconductor Group
11
1998-11-01
TLE 4267
Current Consumption Iq versus Output Current IQ
70
AED01490
Current Consumption Iq versus Input Voltage VI
15
AED01491
q
mA 50 40 30
q
mA
R L = 25
V = 13.5 V
10
5
20 10 0
0
0 100 200 300 400 mA 600
0
10
20
30
V
50
Q
V
Output Current IQ versus Temperature Tj
700
AED01489
Output Current IQ versus Input Voltage VI
700
AED01987
Q
mA 500
Q mA 600
500
V = 13.5 V
Tj = 25 C
Tj = 125 C
400 300 200 100 0 -40
400 300 200 100 0
0
40
80
C
160
0
10
20
30
Tj
40 V 50 Vi
Semiconductor Group
12
1998-11-01
TLE 4267
Output Voltage VQ versus Inhibit Voltage VE2
6
AED01988
Inhibit Current IE2 versus Inhibit Voltage VE2
50
AED01989
VQ
V 5
E2 A
40
4
30
3
20
2
1
10
0
0
1
2
3
4
5V6
0
0
1
2
3
4
VE2
5V6 V E2
Semiconductor Group
13
1998-11-01
TLE 4267
Package Outlines P-TO220-7-3 (Plastic Transistor Single Outline)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" Dimensions in mm Semiconductor Group 14 1998-11-01
TLE 4267
P-TO220-7-180 (Plastic Transistor Single Outline)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Semiconductor Group 15 Dimensions in mm 1998-11-01
TLE 4267
P-TO220-7-230 (Plastic Transistor Single Outline)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" Dimensions in mm Semiconductor Group 16 1998-11-01

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